Ultrasensitive and broad-spectrum polarization sensitive photodetector based on individual Bi₂Te_0.6S_2.4 nanobelt

Polarimetric photodetectors with broadband and fast response have important applications in the military civilian fields. Alloying of semiconductors is a good strategy to regulate its electronic band structure which broadens photoresponse range corresponding optoelectronic devices. In this work, we designed grew high-quality Bi 2 Te 0.6 S 2.4 alloy via controllable chemical vapor transport. The as-prepared nanobelts were work as active layer photodetectors. individual nanobelt based photodetector exhibits excellent properties from solar-blind ultraviolet-C (254 nm) near-infrared (1064 responsivity 340 mA/W, specific detectivity 2.3 × 10 9 Jones, extremely low dark current (1.1 pA). also exhibit speed about 1 μs comes direct transition carriers confirmed by Ohmic contact between electrodes. Furthermore, it worth noting that high polarization sensitivity ranges 266 1064 nm maximum dichroic ratio 2.94 at 808 nm. Our results provide simple semiconductor system for performance multifunctional optoelectronics electronics compared conventional chalcogenides.